Product Summary

The SD1446 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for land mobile transmitter applications. This device utilizes emitter ballasting and is extremely stable and capable of withstanding high VSWR under operating conditions.

Parametrics

SD1446 absolute maximum ratings: (1)VCBO Collector-Base Voltage: 36 V; (2)VCEO Collector-Emitter Voltage: 18 V; (3)VEBO Emitter-Base Voltage: 3.5 V; (4)IC Device Current: 12.0 A; (5)PDISS Power Dissipation: 183 W; (6)TJ Junction Temperature: +200℃; (7)TSTG Storage Temperature: -65 to +150℃.

Features

SD1446 features: (1)5 0 MHz; (2)12.5 VOLTS; (3)EFFICIENCY 55%; (4)COMMON EMITTER; (5)GOLD METALLIZATION; (6)POUT = 70 W MIN. WITH 10 dB GAIN.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SD1446
SD1446
Advanced Semiconductor, Inc.
Transistors RF Bipolar Power RF Transistor
Data Sheet
0-1: $43.20
1-10: $36.00
10-25: $32.40
25-50: $28.80
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SD1400
SD1400
Other

Data Sheet
Negotiable 
SD1400A
SD1400A
Other

Data Sheet
Negotiable 
SD1405
SD1405
STMicroelectronics
Transistors RF Bipolar Power NPN 12.5V 30MHz
Data Sheet
Negotiable 
SD1407
SD1407
Advanced Semiconductor, Inc.
Transistors RF Bipolar Power RF Transistor
Data Sheet
0-1: $39.60
1-10: $33.00
10-25: $29.70
25-50: $26.40
SD1407-16
SD1407-16
STMicroelectronics
Transistors Bipolar (BJT) NPN 28.0V 30MHz
Data Sheet
Negotiable 
SD1409
SD1409
Other

Data Sheet
Negotiable