Product Summary
The TC554161FTL-85L is a 4194304-bit static random access memory (SRAM) organized as 262144 words by 16 bits. Fabricated using Toshiba’CMOS Silicon gate processtechnology, this device operates from a single 5V±10% power supply.
Parametrics
TC554161FTL-85L absolute maximum ratings: (1)VDD, power supply voltage: -0.3 to 7.0V; (2)VIN, input voltage: -0.3 to 7.0V; (3)VI/O, input/output voltage: -0.5 to VDD+0.5V; (4)PD, power dissipation: 0.6W; (5)Tsolder, soldering temperature (10s): 260℃; (6)Tstrg, storage temperature: -55 to 150℃; (7)Topr, operating temperature: 0 to 70℃.
Features
TC554161FTL-85L features: (1)low power dissipation; (2)standby current of 8μA (maximum) at Ta=25℃; (3)single power supply voltage of 5V±10%; (4)data retention supply voltage of 2 to 5.5V; (5)direct TTL compatibility for all inputs and outputs.
Diagrams
TC55 |
Cornell Dubilier |
Aluminum Electrolytic Capacitors - Leaded 20uF 250V |
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