(China (Mainland))
Product Summary
The M5M51008DFP-55H is a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high density and low power static RAM. The M5M51008DFP-55H is low standby current and low operation current and ideal for the battery back-up application. The M5M51008DFP-55H is packaged in a 32-pin thin small outline package which is a high reliability and high density surface mount device(SMD). Two types of devices are available.
Parametrics
M5M51008DFP-55H absolute maximum ratings: (1)Vcc, Supply voltage With respect to GND: -0.3~7v; (2)Vi, Input voltage With respect to GND: -0.3~Vcc + 0.3v; (3)VO, Output voltage With respect to GND: 0~Vcc v; (4)Pd, Power dissipation at Ta=25℃: 700mw; (5)Topr, Operating temperature: 0~70 ℃; (6)Tstg, Storage temperature: -65~150℃.
Features
M5M51008DFP-55H features: (1)Directly TTL compatible: All inputs and outputs; (2)Easy memory expansion and power down by S1, S2; (3)Data hold on +2V power supply; (4)Three-state outputs: OR - tie capability; (5)OE prevents data contention in the I/O bus; (6)Common data I/O.
Diagrams
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 M5M51008BFP |
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M5M51008BFP-70VL |
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Negotiable |
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M5M51008BKV-70VL |
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Negotiable |
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M5M51008BP-55L |
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Negotiable |
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M5M51008BRV-70VL |
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Negotiable |
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M5M51008BVP-70VL |
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Negotiable |
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