AT28C256E-15TU

256K (32K x 8) Paged Parallel EEPROM, TSOP-28, JEDEC Approved Byte-wide Pinout

Rated 5 Rating 5 | reviews | Write a review

Price:: US $2.00~3.00 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
	US $2.00~3.00

PartNumber:: AT28C256E-15TU

Brand:: ATMEL Corporation - ATMEL | Pack: TSOP | D/C: 08+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Sold By

Ms. cathy's store

(China (Mainland))

add to my favourite

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2011-09-19

From Other Seller

Part Number:AT28C256E-15TU
US $2.00 - 3.00
EKY-160ELL121MF11D

US $0.10 - 1.00 / Piece
(0) Remove
A50L-0001-0175

US $100.00 - 100.00 / Piece
(0) Remove
Quantity:

piece

Product Summary

The AT28C256E-15TU is a high-performance electrically erasable and programmable read-only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the AT28C256E-15TU offers access times to 150 ns with power dissipation of just 440 mW. When the device is deselected, the CMOS standby current is less than 200 µA. The AT28C256E-15TU is accessed like a Static RAM for the read or write cycle without the need for external components. The device contains a 64-byte page register to allow writing of up to 64 bytes simultaneously.

Parametrics

AT28C256E-15TU absolute maximum ratings: (1)Temperature under Bias:-55℃ to +125℃; (2)Storage Temperature:-65℃ to +150℃; (3)All Input Voltages(including NC Pins) with Respect to Ground:-0.6V to +6.25V; (4)All Output Voltages with Respect to Ground:-0.6V to VCC + 0.6V; (5)Voltage on OE and A9 with Respect to Ground:-0.6V to +13.5V.

Features

AT28C256E-15TU features: (1)Fast Read Access Time – 150 ns; (2)Automatic Page Write Operation: Internal Address and Data Latches for 64 Bytes, Internal Control Timer; (3)Fast Write Cycle Times: Page Write Cycle Time: 3 ms or 10 ms Maximum, 1 to 64-byte Page Write Operation; (4)Low Power Dissipation: 50 mA Active Current, 200 μA CMOS Standby Current; (5)Hardware and Software Data Protection; (6)DATA Polling for End of Write Detection; (7)High Reliability CMOS Technology: Endurance: 104 or 105 Cycles, Data Retention: 10 Years; (8)Single 5V ±10% Supply; (9)CMOS and TTL Compatible Inputs and Outputs; (10)JEDEC Approved Byte-wide Pinout; (11)Full Military and Industrial Temperature Ranges; (12)Green (Pb/Halide-free) Packaging Option.