Product Summary

The MX25L12845EMI-10G is a 1200V IGBT power module.

Parametrics

MX25L12845EMI-10G aboslute maximum ratings: (1)Collector-emitter voltage:1200 V; (2)Collector-gate voltage RGE = 20 kΩ:1200V; (3)Gate-emitter voltage VGE:± 20V; (4)DC collector current: TC = 25℃:25A, TC = 80℃:15A; (5)Pulsed collector current, tp = 1 ms:TC = 25℃:50A,TC = 80℃:30A; (6)Power dissipation per IGBT TC = 25℃:145W; (7)Chip temperature:+ 150℃; (8)Storage temperature:-40℃ to + 125℃.

Features

MX25L12845EMI-10G features: (1)Power module; (2)3-phase full-bridge; (3)Including fast free-wheel diodes; (4)Package with insulated metal base plate.

Diagrams

MX25L12845EMI-10G block diagram

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