K9WAG08U1A-PIB0

Product Summary

Offered in 1G x 8bit, the K9WAG08U1A-PIB0 is an 8G-bit NAND Flash Memory with spare 256M-bit. Its NAND cell provides the most cost-effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Bytepage and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read outat 25ns cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chipwrite controller automates all program and erase functions including pulse repetition, where required, and internal verification andmargining of data. Even the write-intensive systems can take advantage of the K9WAG08U1A-PIB0′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9WAG08U1A-PIB0 is an optimum solu-tion for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

Parametrics

K9WAG08U1A-PIB0 absolute maximum ratings: (1)Voltage on any pin relative to VSS: -0.6 to +4.6 V, VIN: -0.6 to +4.6 V, VI/O: -0.6 to Vcc+0.3 V (<4.6V); (2)Temperature Under Bias: -40 to +125 ℃; (3)Storage Temperature: -65 to +150 ℃; (4)Short Circuit Current: 5 mA.

Features

K9WAG08U1A-PIB0 features: (1)Voltage Supply: 2.70V ~ 3.60V; (2)Organization: Memory Cell Array : (1G + 32M) x 8bit, Data Register : (2K + 64) x 8bit; (3)Automatic Program and Erase: Page Program : (2K + 64)Byte, Block Erase : (128K + 4K)Byte; (4)Page Read Operation: Page Size : (2K + 64)Byte, Random Read : 25μs(Max.), Serial Access : 25ns(Min.); (5)Fast Write Cycle Time: Page Program time : 200μs(Typ.), Block Erase Time : 1.5ms(Typ.); (6)Command/Address/Data Multiplexed I/O Port; (7)Hardware Data Protection: Program/Erase Lockout During Power Transitions; (8)Reliable CMOS Floating-Gate Technology.

Diagrams