(China (Mainland))
Product Summary
The S29GL512N11TFI02 is a 3.0 V single power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL512N11TFI02 is a 64-Mb device organized as 4,194,304 words or 8,388,608 bytes. The S29GL512N11TFI02 is a 32-Mb device organized as 2,097,152 words or 4,194,304 bytes. The S29Gl016A is a 16 Mb device organized as 1,048,576 words or 2,097,152 bytes. Depending on the model number, the devices have an 8-bit wide data bus only, 16-bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. S29GL512N11TFI02 can be programmed either in the host system or in standard EPROM programmers.
Parametrics
S29GL512N11TFI020 absolute maximum ratings: (1)Storage Temperature, Plastic Packages: –65℃ to +150℃; (2)Ambient Temperature with Power Applied: –65℃ to +125℃; (3)Voltage with Respect to Ground: –0.5V to +4.0V VCC(Note 1), -0.5V to +12.5V A9, OE#, ACC and RESET# (Note 2), -0.5V to VCC+0.5 V All other pins (Note 1); (4)Output Short Circuit Current (Note 3): 200 mA.
Features
S29GL512N11TFI020 features: (1)90 ns access time; (2)4-word/8-byte page read buffer; (3)25 ns page read times; (4)16-word/32-byte write buffer which reduces overall programming time for multiple-word updates; (5)18 mA typical active read current; (6)50 mA typical erase/program current; (7)1 μA typical standby mode current.
Diagrams
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 S29GL016A |
Other |
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Negotiable |
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S29GL01GP |
Other |
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Data Sheet |
Negotiable |
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S29GL01GP11FAIR10 |
Spansion |
Flash IC 1GIG 3.0V FLSHMEM |
Data Sheet |
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S29GL01GP11FAIR20 |
Spansion |
Flash 1GB 3.0-3.6V 110ns |
Data Sheet |
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S29GL01GP11FFCR10 |
Spansion |
Flash 1GB 3.0-3.6V 110ns PBF |
Data Sheet |
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S29GL01GP11FFCR20 |
Spansion |
Flash 1GB 3.0-3.6V 110ns PBF |
Data Sheet |
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